On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)
D. A. AronovS. V. Starodubstev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSRR. MamatkulovV. I. Lenin State University, Tashkent
ABI
Abstract
On the basis of calculations given in [1] the durations of various stages of the recovery process of reverse resistance after reversal of a p–i–n diode current from forward to reverse direction, the values of voltage jumps across the junctions and in the bulk of the diode at the instant of current reversal are calculated and the effect is determined of forward and reverse currents on the above values. Also the situation where punch-through occurs during the extraction of excess charge carriers in a p–i–n structure with relatively short i-region is considered. [Russian Text Ignored.]
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