Article

Parameters of silicon microdiodes fabricated by selective epitaxy

M. V. DrozdovaA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RВ. Л. СухановA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RV.V. TuchkevichA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RN.M. SchmidtA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.RB. YavichA.F. Ioffe Physicotechnical Institute, Leningrad, U.S.S.R

Thin Solid Filmsjournal1976en

ABI

Abstract

No abstract available.

Topics

Silicon and Solar Cell Technologies Thin-Film Transistor Technologies Integrated Circuits and Semiconductor Failure Analysis

Identifiers

DOI: 10.1016/0040-6090(76)90041-9

Citations and references

Cited by 03 references

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