Quantum size effect in bismuth-antimony alloy films
E. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRYu. V. NikitinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRYu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI
Abstract
The electrical resistivity ρ of single-crystal bismuth-antimony alloy films was measured in specimens of varying thickness L and fixed Sb concentration c and in specimens of varying composition and fixed thickness. At 4.2° K the value of ρ oscillates with variation of both the specimen thickness and composition. Both kinds of oscillatory dependences are due to the size quantization of the charge carrier spectrum of thin films. The ρ(c) oscillations in constant thickness specimens are associated with the change of the maximum momentum caused by changes in the bismuth-antimony alloy composition. From the results obtained, a plot of the composition dependence of the maximum momentum along the C3 axis can be derived.
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