Charge carrier drift velocity in a finite bismuth single crystal

Abstract

The drift velocity of charge carriers in a bismuth single crystal with crossed electric and magnetic fields (E⊥H) is calculated numerically. The real structure of the Fermi surface and electric fields perpendicular to the current density vector, produced within a finite specimen, are considered. Results obtained agree well with observations of the transition of bismuth into the phonon generation regime under the condition cE/Hs≈0.5.

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Identifiers

DOI

10.1063/10.0029682

Citations and references