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Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

Г. А. АлександроваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskИ. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskL. M. Krasil'nikovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskL. F. Lavrent'evaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskA. E. ShubinV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. P. YakubenyaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk
Russian Physics Journaljournal1980en
ABI

Abstract

No abstract available.

Topics

Advanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and Devicesnanoparticles nucleation surface interactions

Identifiers

DOI
10.1007/bf00892532

Citations and references

Cited by 05 references
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