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Ion doping of gallium arsenide

П. В. ПавловPhysicotechnical Research Institute at the N. I. Lobachevskii State University, GorkiE. I. ZorinPhysicotechnical Research Institute at the N. I. Lobachevskii State University, GorkiD. I. TetelbaumPhysicotechnical Research Institute at the N. I. Lobachevskii State University, Gorki
Russian Physics Journaljournal1980en
ABI

Abstract

No abstract available.

Topics

Phase-change materials and chalcogenidesSemiconductor Quantum Structures and DevicesAdvanced Semiconductor Detectors and Materials

Identifiers

DOI
10.1007/bf00895766

Citations and references

Cited by 064 references
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