Article

Features of the self-trapping of highly excited states in neon and argon crystals at low temperature

A. G. BelovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovE. M. YurtaevaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovV. N. SvishchevPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov

Soviet Journal of Low Temperature Physicsjournal1981en

ABI

Abstract

We have examined the luminescence from highly excited self-trapped one-center states, the relaxation processes of the band excitations, and the mechanisms of formation of highly excited quasiatomic centers in low-temperature crystals of the light rare gases and their solid solutions. The fundamental channel of population of highly excited emitting centers involves hole self-trapping with formation of two-center R2+ states; dissociative recombination of these forms one-center np5(n + 1)p excitations. We discuss the effect of self-trapping of highly excited states on the population of the lowest emitting centers in neon and argon crystals.

Topics

Photorefractive and Nonlinear Optics Quantum optics and atomic interactions Gyrotron and Vacuum Electronics Research

Identifiers

DOI: 10.1063/10.0030486

Citations and references

Cited by 07 references

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