Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)
Sh. A. GulamovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSR, TashkentYu. A. KatulevskiiS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSR, TashkentР. А. МуминовS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbekian SSR, Tashkent
ABI
Abstract
Abstract The possibility of arising of both, longitudinal and transverse electromotive forces (e. m. f.) in a semiconductor placed only into a non‐homogeneous magnetic field is shown firstly. The appearance of the e. m. f. is due to the interaction of the spin and orbital magnetic moments of current carriers with an external non‐homogeneous magnetic field. The spatial distribution of current carriers, that of the electric field, and the expressions for the longitudinal and transverse e. m. f. are found by using the magnetohydrodynamical approximation.
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