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Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

B. S. AzikovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskV. N. Brudnyı̆V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskI. V. KаmenskayaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk
Russian Physics Journaljournal1981en
ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfacesIon-surface interactions and analysisPolymer Nanocomposite Synthesis and Irradiation

Identifiers

DOI
10.1007/bf00894493

Citations and references

Cited by 06 references
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