I. V. Kаmenskaya

2 works

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

   ArticleSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 citations

   ABIABI:AkademIndex/openalex/1980.article.000114

2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   ArticleSemiconductor materials and interfacesRussian Physics Journal19810 citations

   ABIABI:AkademIndex/openalex/1981.article.000091