Article

Hydrogen determination in silicon nitride films by the nuclear recoil method

И. П. ЧерновResearch Institute of Nuclear Physics, 2a Lenin Avenue, Tomsk 634051, U.S.S.RV. N. ShadrinResearch Institute of Nuclear Physics, 2a Lenin Avenue, Tomsk 634051, U.S.S.RJu.P. CherdantsevResearch Institute of Nuclear Physics, 2a Lenin Avenue, Tomsk 634051, U.S.S.RV. N. SulemaResearch Institute of Nuclear Physics, 2a Lenin Avenue, Tomsk 634051, U.S.S.RL.V. ChramovaInstitute of Inorganic Chemistry, 3 Science Avenue, Novosibirsk 630090, U.S.S.RT. P. SmirnovaInstitute of Inorganic Chemistry, 3 Science Avenue, Novosibirsk 630090, U.S.S.RV. I. BelyĭInstitute of Inorganic Chemistry, 3 Science Avenue, Novosibirsk 630090, U.S.S.R

Thin Solid Filmsjournal1982en

ABI

Abstract

No abstract available.

Topics

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Semiconductor materials and devices

Identifiers

DOI: 10.1016/0040-6090(82)90349-2

Citations and references

Cited by 05 references

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