Article

On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field

V. I. Ivanov-OmskiĭIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RS. I. KokhanovskiǐIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RR. P. SeysyanIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RV. A. SmirnovIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RV. A. YukishIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RSh. U. YuldashevIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.RAl. L. ÉfrosIoffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.R

Solid State Communicationsjournal1983en

ABI

Abstract

No abstract available.

Topics

Semiconductor Quantum Structures and Devices Advanced Semiconductor Detectors and Materials Quantum and electron transport phenomena

Identifiers

DOI: 10.1016/0038-1098(83)90022-4

Citations and references

Cited by 04 references

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