Investigation of crystal structure of cubic silicon carbide layers

Abstract

The crystal structure of a buffer film and β-SiC epitaxial layers grown on silicon substrates with (111) and (100) orientations according to the substrate temperature and film thickness are studied by electron diffraction and electron microscopy. It is shown that for the growth of β-SiC single crystal layers on silicon it is necessary to limit the thickness of the primarily deposited buffer film (<40nm), to cool the substrate with the buffer film to room temperature, and to carry the process of β-SiC layer growth (in our case by CH3SiCl3 thermal decomposition in H2) at higher temperatures (≧ 1380°C). [Russian Text Ignored.]

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DOI

10.1002/pssa.2210970203

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