Article

Phase transitions in doped silicon

D. A. VakhabovInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentA. S. ZakirovInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentKh. T. IgamberdyevInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentA. T. MamadalimovInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentKh. MakhmudovInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentSh. O. TursunovInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentT. A. UsmanovInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentKh. S. YuldashevInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, TashkentP. K. KhabibullaevInstitute of Chemistry and Physics of Polymers, Academy of Sciences of the Uzbek SSR, Tashkent

Journal of Engineering Physics and Thermophysicsjournal1988en

ABI

Abstract

No abstract available.

Topics

Silicon Nanostructures and Photoluminescence Thermal properties of materials Semiconductor Quantum Structures and Devices

Identifiers

DOI: 10.1007/bf00870490

Citations and references

Cited by 02 references

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