Article

Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

Г. А. АлександроваV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskИ. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskL. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskP. B. PashchenkoV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskM. V. ChekanovaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

Russian Physics Journaljournal1988en

ABI

Abstract

No abstract available.

Topics

GaN-based semiconductor devices and materials nanoparticles nucleation surface interactions

Identifiers

DOI: 10.1007/bf00895989

Citations and references

Cited by 06 references

Metrics — AkademScholar · Coming soon