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L. G. Lavrent’eva

4 works

V. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

  1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

    L. G. Lavrent’eva

    Articlenanoparticles nucleation surface interactionsRussian Physics Journal19800 citations
    ABI

  2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

    L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

    ArticleOptical Coatings and GratingsRussian Physics Journal19810 citations
    ABI

  3. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

    Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

    ArticleGaN-based semiconductor devices and materialsRussian Physics Journal19880 citations
    ABI

  4. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

    И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

    ArticleSemiconductor materials and interfacesRussian Physics Journal19920 citations
    ABI