N. N. Krivolapov

1 works

V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

1. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   ArticleSemiconductor materials and interfacesRussian Physics Journal19920 citations

   ABIABI:AkademIndex/openalex/1992.article.000151