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Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states

V. V. KaplinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteVladimir I. GridnevInstitute of Nuclear Physics, Tomsk Polytechnical InstituteV. G. KhlabutinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteE. I. RozumInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute
physica status solidi (b)journal1989en
ABI

Abstract

Abstract Volume capture of (1.5 to 5.7) MeV electrons into the quantum states of planar and axial channeling along (100), (110), (111), and 〈110〉 directions of Si crystal is investigated. The measurements carried out on crystals with the thickness of 2 and 7 μm reveal two different mechanisms for the volume capture: a small‐angle multiple scattering and strong single scattering of electrons. In the former case the near‐barrier weakly bound states are populated basically, in the latter one they are strongly bound states.

Topics

Crystallography and Radiation PhenomenaAdvanced Electron Microscopy Techniques and ApplicationsNuclear materials and radiation effects

Identifiers

DOI
10.1002/pssb.2221520106

Citations and references

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