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V. G. Khlabutin

4 works

Institute of Nuclear Physics, Tomsk Polytechnical Institute

  1. Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

    Vladimir I. Gridnev, V. V. Kaplin, V. G. Khlabutin +2

    ArticleCrystallography and Radiation Phenomenaphysica status solidi (b)19872 citations
    ABI

  2. Observation of similarity of angular distributions of electrons at planar channeling in silicon crystal

    Vladimir I. Gridnev, V. G. Khlabutin, E. I. Rozum +1

    ArticleCrystallography and Radiation Phenomenaphysica status solidi (b)19870 citations
    ABI

  3. Quantum Modulation of Electron Dechanneling

    V. G. Khlabutin, Vladimir I. Gridnev, E. I. Rozum

    ArticleNuclear materials and radiation effectsphysica status solidi (b)19880 citations
    ABI

  4. Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states

    V. V. Kaplin, Vladimir I. Gridnev, V. G. Khlabutin +2

    ArticleCrystallography and Radiation Phenomenaphysica status solidi (b)19890 citations
    ABI