Article

High-frequency properties of point contacts due to nonequilibrium phonon relaxation

Michael MoskaletsPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov

Soviet Journal of Low Temperature Physicsjournal1989en

ABI

Abstract

The resistance due to the scattering of electrons by phonons is calculated for the case when the energy distribution of phonons does not coincide with the equilibrium Planck distribution. The nonlinear current-voltage characteristic of a point contact with nonequilibrium phonons is investigated. The frequency dispersion of conductivity of the point contact contains information about the phonon-electron collision frequency νpc in the region of high energies and about the frequency νT of thermal equilibrium stabilization.

Topics

Force Microscopy Techniques and Applications Integrated Circuits and Semiconductor Failure Analysis Semiconductor Quantum Structures and Devices

Identifiers

DOI: 10.1063/10.0032133

Citations and references

Cited by 00 references

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