Article

Hall emf under acousto-electronic nonlinearity in bismuth

S. V. BengusPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovYu. A. BogodPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovPeter FinkelPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov

Soviet Journal of Low Temperature Physicsjournal1990en

ABI

Abstract

The Hall emf of a bismuth sample with a nonuniform current density distribution is measured under the conditions of acousto-electronic nonlinearity. The magnetic field range was 20–140 kOe at T = 4.2 K. The experimental results are explained by the contribution of drag effects and of phonon–phonon interaction to the quantity being measured.

Topics

Mechanical and Optical Resonators Sensor Technology and Measurement Systems Advanced MEMS and NEMS Technologies

Identifiers

DOI: 10.1063/10.0032729

Citations and references

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