Article

Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy

V. P. GermogenovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskO. M. IvlevaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskС. В. ПономаревV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskL. S. KhludkovaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskL. E. �piktetovaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk,

Russian Physics Journaljournal1992en

ABI

Abstract

No abstract available.

Topics

Semiconductor Quantum Structures and Devices Advanced Semiconductor Detectors and Materials Semiconductor materials and interfaces

Identifiers

DOI: 10.1007/bf01324978

Citations and references

Cited by 014 references

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