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Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

Sh. MakhkamovInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 702132, UzbekistanS. N. AbdurakhmanovaInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 702132, Uzbekistan
MRS Proceedingsjournal1995en
ABI

Abstract

No abstract available.

Topics

Silicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence

Identifiers

DOI
10.1557/proc-396-775

Citations and references

Cited by 04 references
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