Skip to main content
AkademIndex

Products

For developers

AkademBasesoonOpen API for the ecosystem
Latin
Article

Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

K. M. DoshchanovPhysicotechnical Institute Science and Industrial Union “Physics-Sun,”, Uzbekistan Academy of Sciences, 700084, Tashkent, Uzbekistan
Semiconductorsjournal1997en
ABI

Abstract

The electric resistance and effective carrier mobility in polycrystalline silicon are calculated as functions of temperature and the photoexcitation level. The theoretical results are in agreement with existing experimental data.

Topics

Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Identifiers

DOI
10.1134/1.1187258

Citations and references

Cited by 07 references
Metrics — AkademScholar · Coming soon