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Polarization switching time for semiconductor laser radiation

G. S. SokolovskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. G. DeryaginA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. KuchinskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
Technical Physics Lettersjournal1997en
ABI

Abstract

Expressions are derived for the polarization switching time for semiconductor laser radiation. These expressions can be used to assess the influence of the laser diode parameters on the polarization switching time of the output radiation. The results of an analysis of these expressions show that the main parameters influencing the polarization switching of the output radiation from a semiconductor laser are the nonlinear gains.

Topics

Semiconductor Lasers and Optical DevicesPhotonic and Optical DevicesAdvanced Optical Sensing Technologies

Identifiers

DOI
10.1134/1.1261685

Citations and references

Cited by 06 references
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