V. I. Kuchinskiĭ

4 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Polarization switching time for semiconductor laser radiation

   G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

   ArticleSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000114

2. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000239

3. Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

   В. И. Васильев, A. G. Deryagin, V. I. Kuchinskiĭ +4

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000172

4. Modulation of the polarization of semiconductor laser radiation at constant output power

   G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

   ArticlePhotonic and Optical DevicesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000272