Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region
В. И. ВасильевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. G. DeryaginA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. KuchinskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. М. СмирновA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgG. S. SokolovskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. N. Tret’yakovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,N. N. FaleevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
The growth of epitaxial layers of GaSb lattice-matched Ga1−x InxAsySb1− y solid solutions by liquid-phase epitaxy from Sb-enriched liquid phases within the spinodal decay region is reported. The highest value of the composition (x=0.4) was achieved for growth on a GaSb(111)B substrate. Results of investigations of the luminescence and structural properties of these solid solutions are presented.
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