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Work: New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

  1. 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

    А. Н. Баранов, A. N. Imenkov, V. V. Sherstnev +1

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  2. Scanning Electron Microscopy and X-Ray Microanalysis

    Joseph I. Goldstein, Dale E. Newbury, Joseph R. Michael +3

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  3. Scanning Electron Microscopy and X-Ray Microanalysis

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  4. Continuous wave operation of InAs/InAs<i>x</i>Sb1−<i>x</i> midinfrared lasers

    Yong‐Hang Zhang

    Article19952 citations
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  5. Modern trends in diode laser spectroscopy

    Alexander I. Nadezhdinskii, A. M. Prokhorov

    Article19922 citations
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  6. Single-frequency InAsSb lasers emitting at 3.4 μm

    А. А. Попов, V. V. Sherstnev, Yury P. Yakovlev +2

    Article19962 citations
    ABI