Article

Polycrystalline silicon films doped with aluminum during deposition

D. V. ShengurovScientific-Research Physicotechnical Institute, Nizhnii Novgorod State University, Nizhnii Novgorod

Technical Physics Lettersjournal1997en

ABI

Abstract

Aluminum-doped polycrystalline silicon films have been grown by molecular-beam deposition at substrate temperatures between 540 and 600 °C. The grain size increases to 1–8 μm with increasing substrate temperature. High Hall mobilities of the carriers were measured, in the range 30–90 cm2/V·s.

Topics

Thin-Film Transistor Technologies Silicon and Solar Cell Technologies Semiconductor materials and devices

Identifiers

DOI: 10.1134/1.1261710

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