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Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

G. É. CirlinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. N. PetrovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. A. MasalovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. O. GolubokA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
Technical Physics Lettersjournal1997en
ABI

Abstract

Multilayer structures of InGaAs/GaAs quantum dots fabricated by submonolayer migrationstimulated epitaxy have been studied experimentally by scanning tunneling microscopy and results are presented. These results clearly show that in multilayer structures, ordering of nanoobjects into rows occurs in InAs and InGaAs heteroepitaxial layers.

Topics

Semiconductor Quantum Structures and DevicesQuantum and electron transport phenomenaSemiconductor materials and devices

Identifiers

DOI
10.1134/1.1261923

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