The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures
Sh. MakhkamovN.A. TursunovM. AshurovR.P. SaidovS.V. MartynchenkoAN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
1997en
ABI
Abstract
No abstract available.
Topics
Citations and references
Cited by 00 references
Metrics — AkademScholar · Coming soon