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Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

M. AshurovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, UzbekistanSh. MakhkamovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, UzbekistanN.A. TursunovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, UzbekistanS.V. MartynchenkoInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, Uzbekistan
MRS Proceedingsjournal1998en
ABI

Abstract

No abstract available.

Topics

Semiconductor materials and interfacesSilicon and Solar Cell TechnologiesSilicon Nanostructures and Photoluminescence

Identifiers

DOI
10.1557/proc-510-265

Citations and references

Cited by 01 references
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