Characteristics of the formation of radiation defects in silicon structures
Sh. MakhkamovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanN.A. TursunovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanM. AshurovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanR.P. SaidovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanS.V. MartynchenkoInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, Uzbekistan
ABI
Abstract
The method of deep-level transient spectroscopy is used to investigate aspects of the formation of radiation defects in silicon p +-n diffusion structures when bombarded by accelerated electrons. It is shown that for base thicknesses of the p +-n structures in the range 0.2–0.6mm a substantial change in the concentration of the radiation defects formed in this way is observed, having a maximum at 0.25 mm. Below 0.2 mm and above 0.6 mm the concentration of radiation defects exhibits a weak dependence on base thickness. The observed effect is explained by variation of the relative concentrations of vacancies and interstitial silicon atoms in the base during formation of p +-n pairs.
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