Article

Electrical properties of Schottky diodes using high-resistivity CdTe crystals

V. O. UkrainetsA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgГ. А. ИльчукA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. A. UkrainetsA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. RudA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. Ivanov-OmskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1999en

ABI

Abstract

The Schottky barrier height is measured for single crystals doped with the halogens Cl, Br, and I during growth by chemical transport reactions. The measurements are made using a modification of the F(V) function [N. V. Agrinskaya, Mater. Sci. Eng. B 16, 172 (1993)] proposed by the authors.

Topics

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/1.1262583

Citations and references

Cited by 06 references

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