Article

Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase

А. С. СаидовPhysicotechnical Institute, Scientific Industrial Association “Solar Physics,”, Uzbek Academy of Sciences, TashkentÉ. A. KoshchanovPhysicotechnical Institute, Scientific Industrial Association “Solar Physics,”, Uzbek Academy of Sciences, TashkentA. Sh. RazzakovPhysicotechnical Institute, Scientific Industrial Association “Solar Physics,”, Uzbek Academy of Sciences, TashkentSh. K. IsmailovPhysicotechnical Institute, Scientific Industrial Association “Solar Physics,”, Uzbek Academy of Sciences, Tashkent

Technical Physics Lettersjournal1999en

ABI

Abstract

Structures comprising Si-Si1−x Gex-(Ge2)1−x (InP)x with an intermediate Si1−x Gex buffer layer were grown on silicon substrates. Morphological examinations, scanning patterns and diffraction spectra, and also the electrophysical and luminescence properties of the heterostructures were used to show that the crystal perfection of these structures depends on the choice of liquid-phase epitaxy conditions.

Topics

Silicon Nanostructures and Photoluminescence Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/1.1262702

Citations and references

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