Effect of anodic etching of heavily doped silicon on the location of the plasma minimum
V. B. ShumanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
It is shown experimentally that the minimum in the reflectance spectrum of heavily doped n-Si shifts strongly toward lower frequencies when porous Si layers form on it.
Topics
Identifiers
Citations and references
Cited by 07 references