Silicon single crystals ion-doped with ytterbium
D. É. NazyrovTashkent State University, Tashkent, UzbekistanSemyon GoncharovIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, RussiaА. В. СуворовIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
ABI
Abstract
The postimplantation distribution of defects and dopant atoms in silicon samples ion-implanted with the rare-earth element ytterbium was studied for the first time. The radiation damage profile coincides with the profile of implanted ytterbium.
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