Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

Abstract

The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.

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DOI

10.1134/1.1262787

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