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Linear photovoltaic effect in gyrotropic crystals

Rustam Yavkachovich RasulovFergana State University, Fergana, 71200, UzbekistanYu. E. SalenkoFergana State University, Fergana, 71200, UzbekistanD. KambarovFergana State University, Fergana, 71200, Uzbekistan
Semiconductorsjournal2002en
ABI

Abstract

The ballistic and shift linear photovoltaic effects caused by asymmetry of the probability of optical transitions between subbands M 1 ′ and M 2 ′ in tellurium (involving long-wave optical phonons) and by carrier shift in real space at quantum transitions, respectively, are considered. The temperature and frequency dependences of the current of both ballistic and shift linear photovoltaic effects for the photon and phonon mechanisms are analyzed.

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