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Modification of the physical and chemical properties of GaAs/Ge surface epitaxy films by ion implantation

Д. А. ТашмухамедоваTashkent State Technical University, Universitetskaja 2, 700095 Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University, Universitetskaja 2, 700095 Tashkent, Uzbekistan
Surface and Coatings Technologyjournal2002en
ABI

Abstract

No abstract available.

Topics

Ion-surface interactions and analysisSemiconductor materials and interfacesSemiconductor Quantum Structures and Devices

Identifiers

DOI
10.1016/s0257-8972(02)00251-7

Citations and references

Cited by 02 references
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