Defect formation and crystallization in a-Si:H induced by Si+ implantation
O. A. GolikovaLaboratory of Physics of Semiconducting Devices, Ioffe Institute, 194021 St. Peterburg, RussiaE. V. BogdanovaLaboratory of Physics of Semiconducting Devices, Ioffe Institute, 194021 St. Peterburg, RussiaAlexey N. Kuznetsov∥Laboratory of Physics of Semiconducting Devices, Ioffe Institute, 194021 St. Peterburg, RussiaÉ. P. DomashevskayaSolid State Department, Voronezh State University, 394693 Voronezh, RussiaV. A. TerekhovSolid State Department, Voronezh State University, 394693 Voronezh, RussiaN. R. RAHIMOVPhysical and Technical Department, Namangan State University, 716019 Namangan, UzbekistanKh. Yu. MavlyanovPhysical and Technical Department, Namangan State University, 716019 Namangan, Uzbekistan
ABI
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