Minority carrier lifetimes in polycrystalline silicon treated with liquid metals
Б. СапаевPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The effect of treatment at 800°C in various liquid metal solvents (Sn, Bi, Pb) on the minority carrier lifetime τ in polycrystalline silicon has been studied. The results of dc photoconductivity measurements show evidence of the external gettering effect, the best gettering being observed when tin was used as the solvent. A 2-h treatment leads to a twofold increase in the τ value. The experimental data indicate that the external gettering effect can be used in practice.
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