Article

Diffusion of ytterbium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2003en

ABI

Abstract

Diffusion of ytterbium in silicon is studied by the direct method of radioactive isotopes in the temperature range of 1100–1250°C. Diffusion coefficients of ytterbium impurity in silicon are determined.

Topics

Graphite, nuclear technology, radiation studies Silicon and Solar Cell Technologies Nuclear reactor physics and engineering

Identifiers

DOI: 10.1134/1.1610112

Citations and references

Cited by 02 references

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