Article

Effect of laser processing on gallium arsenide device structures

S.E. BekbergenovBerdakh Karakalpak State University, Nukus, Uzbekistan

2004en

ABI

Abstract

Some aspects of laser processing application in the formation of gallium arsenide surface-barrier structures and ohmic contacts for them are considered on the basis of analysis of experimental results known from literature, as well as those obtained by the author.

Topics

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Photonic and Optical Devices

Identifiers

DOI: 10.1109/crmico.2004.183329

Citations and references

Cited by 00 references

Metrics — AkademScholar