← Back to work
Works cited by this work
8 works
Work: Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
T. Dalibor, Gerhard Pensl, H. Matsunami +4
Article19975 citationsABIHigh-dose Al-implanted 4H-SiC p+-n-n+ junctions
E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11
Article20004 citationsABIInfluence of proton irradiation on recombination current in 6H–SiC pn structures
Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina +2
Article19993 citationsABISwift Heavy Ion Irradiation Effects in SiC Measured by Positrons
L. Liszkay, K. Havancsák, M.F. Barthe +6
Article20012 citationsABIOptical and electrical properties of 6H α-SiC irradiated by swift xenon ions
M. Levalois, I. Lhermitte-Sebire, P. Marié +2
Article19962 citationsABI