Article

The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

П. Б. ПарчинскийNational University of Uzbekistan, Tashkent, UzbekistanL. G. LigaiNational University of Uzbekistan, Tashkent, UzbekistanKh. Zh. MansurovNational University of Uzbekistan, Tashkent, UzbekistanSh. Kh. IulchievNational University of Uzbekistan, Tashkent, Uzbekistan

Technical Physics Lettersjournal2005en

ABI

Abstract

We have studied the effect of γ radiation on the generation characteristics of a silicon-silicon dioxide (Si-SiO2) interface formed upon thermal oxidation of the surface of silicon. The irradiation leads to the appearance of a temperature dependence of the surface generation velocity. This effect is related to the formation of radiation-induced traps capable of exchanging trapped carriers with the bulk of a semiconductor by means of tunneling emission.

Topics

Silicon Nanostructures and Photoluminescence Silicon and Solar Cell Technologies Thin-Film Transistor Technologies

Identifiers

DOI: 10.1134/1.1920373

Citations and references

Cited by 02 references

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