Article

Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere

M. AkhmedovaPhysical-Technical Institute of Academy of Sciences, UzbekistanА. В. СмирновPhysical-Technical Institute of Academy of Sciences, Uzbekistan

2005en

ABI

Abstract

Preliminary thermal treatment of InP in nitrogen atmosphere before Zn diffusion process creates thin protective layer on the surface of semiconductor, which prevent evaporation of P and by this it reduces degradation of surface layer.

Topics

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Photonic and Optical Devices

Identifiers

DOI: 10.1109/iciprm.2005.1517515

Citations and references

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