Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese
М. К. БахадырхановBeruni State Technical University, Tashkent, 700095, UzbekistanО. Э. СаттаровBeruni State Technical University, Tashkent, 700095, UzbekistanХ. М. ИлиевBeruni State Technical University, Tashkent, 700095, UzbekistanK. S. AyupovBeruni State Technical University, Tashkent, 700095, UzbekistanTuérdi UmaierBeruni State Technical University, Tashkent, 700095, Uzbekistan
ABI
Abstract
It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established.
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