Article

hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2005en

ABI

Abstract

Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity.

Topics

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces GaN-based semiconductor devices and materials

Identifiers

DOI: 10.15407/spqeo8.01.079

Citations and references

Cited by 04 references

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