Electrical and optical properties of ZnO thin films grown on Si substrates
Sh. U. YuldashevDongguk University Quantum Functional Semiconductor Research Center, , 3-26 Pildong Chungku, Seoul 100-715, KoreaГ. Н. ПанинDongguk University Quantum Functional Semiconductor Research Center, , 3-26 Pildong Chungku, Seoul 100-715, KoreaTae Won KangDongguk University Quantum Functional Semiconductor Research Center, , 3-26 Pildong Chungku, Seoul 100-715, KoreaР. А. НусретовAcademy of Sciences Heat Physics Department, , Katartal street 28, Tashkent 700135, UzbekistanI. V. KhvanAcademy of Sciences Heat Physics Department, , Katartal street 28, Tashkent 700135, Uzbekistan
ABI
Abstract
Undoped and nitrogen doped ZnO films were deposited on Si substrates by ultrasonic spray pyrolysis at ambient atmosphere. The p type of conductivity for the nitrogen doped ZnO films has been observed. The concentration of free holes in ZnO films has been found to depend strongly on the resistivity of Si substrate. With decreasing of the substrate resistivity the concentration of free holes in ZnO films increases. The hole concentration of 1.1×1018cm−3 and the hole mobility of 24cm2V−1s−1 were observed in the ZnO films grown on the Si substrates with the resistivity of 0.001Ωcm.
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